NTBS2D7N06M7
NTBS2D7N06M7
Part Number NTBS2D7N06M7 Description NMOS D2PAK 60V 2.7 MOHM Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263)
To learn about the specification of NTBS2D7N06M7, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTBS2D7N06M7 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTBS2D7N06M7.
We are offering NTBS2D7N06M7 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTBS2D7N06M7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTBS2D7N06M7 Standard Package 800 Manufacturer ON Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6655pF @ 30V FET Feature - Power Dissipation (Max) 176W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTBS2D7N06M7 - Related ProductsMore >>
IPP60R600P7XKSA1 Infineon Technologies, N-Channel 650V 6A (Tc) 30W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
View
SIB452DK-T1-GE3 Vishay Siliconix, N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®
View
RJ1U330AAFRGTL Rohm Semiconductor, N-Channel 250V 33A (Ta) 211W (Tc) Surface Mount LPTS, Automotive, AEC-Q101
View
TK8A10K3,S5Q Toshiba Semiconductor and Storage, N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS, U-MOSIV
View
RV3C002UNT2CL Rohm Semiconductor, N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0604,
View
CPH6443-TL-W ON Semiconductor, N-Channel 35V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH,
View
FQN1N60CTA ON Semiconductor, N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3, QFET®
View
IPB80N06S2H5ATMA2 Infineon Technologies, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
SPD04N60C3ATMA1 Infineon Technologies, N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
SIR818DP-T1-GE3 Vishay Siliconix, N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IXTP60N10T IXYS, N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220AB, TrenchMV™
View
FDN327N ON Semiconductor, N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
NTBS2D7N06M7 - Tags
English
