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IRF200P222

IRF200P222

Part NumberIRF200P222

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 182A TO247AC

DatasheetIRF200P222

Package / CaseTO-247-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 182A (Tc) 556W (Tc) Through Hole TO-247AC

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IRF200P222 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF200P222
Standard Package	400
Manufacturer	Infineon Technologies
Series	StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	182A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.6mOhm @ 82A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	203nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9820pF @ 50V
FET Feature	-
Power Dissipation (Max)	556W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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