IRF5801TRPBF

Part NumberIRF5801TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF5801PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	88pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro6™(TSOP-6)
Package / Case	SOT-23-6 Thin, TSOT-23-6

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BUK9275-100A,118	Nexperia USA Inc., N-Channel 100V 21.7A (Tc) 88W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
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BUK7Y1R7-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 294W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View

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