IRF5801TRPBF
IRF5801TRPBF
Part Number IRF5801TRPBF Description MOSFET N-CH 200V 600MA 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
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IRF5801TRPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF5801PBF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 360mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro6™(TSOP-6) Package / Case SOT-23-6 Thin, TSOT-23-6
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