IRFB31N20DPBF

Part NumberIRFB31N20DPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 31A TO-220AB

DatasheetIRFB31N20DPbF, IRFS(L)31N20DPbF

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB

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IRFB31N20DPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFB31N20DPbF, IRFS(L)31N20DPbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2370pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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