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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIS454DN-T1-GE3
Vishay Siliconix, N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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SQM60030E_GE3
Vishay Siliconix, N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, TrenchFET®
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STB19NF20
STMicroelectronics, N-Channel 200V 15A (Tc) 90W (Tc) Surface Mount D2PAK, MESH OVERLAY™
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FDD5670
ON Semiconductor, N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®
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ZVN2110ASTZ
Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
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FDP61N20
ON Semiconductor, N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3, UniFET™
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IPB080N03LGATMA1
Infineon Technologies, N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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STD6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
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SIHA22N60E-E3
Vishay Siliconix, N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,
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FDH055N15A
ON Semiconductor, N-Channel 150V 158A (Tc) 429W (Tc) Through Hole TO-247-3, PowerTrench®
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DMG4800LK3-13
Diodes Incorporated, N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3,
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IPL60R199CPAUMA1
Infineon Technologies, N-Channel 650V 16.4A (Tc) 139W (Tc) Surface Mount PG-VSON-4, CoolMOS™
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