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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSC036NE7NS3GATMA1
Infineon Technologies, N-Channel 75V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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BUK961R6-40E,118
Nexperia USA Inc., N-Channel 40V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FQPF5N90
ON Semiconductor, N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F, QFET®
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PMZB550UNEYL
Nexperia USA Inc., N-Channel 30V 590mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3,
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SIHB24N65EF-GE3
Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
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SIRC10DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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STF25N60M2-EP
STMicroelectronics, N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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DMN601TK-7
Diodes Incorporated, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SOT-523,
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STU6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™
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STD6N80K5
STMicroelectronics, N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK, SuperMESH5™
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FCD4N60TM
ON Semiconductor, N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-Pak, SuperFET™
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IXFL210N30P3
IXYS, N-Channel 300V 108A (Tc) 520W (Tc) Through Hole ISOPLUS264™, HiPerFET™, Polar3™
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