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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BUK661R9-40C,118
Nexperia USA Inc., N-Channel 40V 120A (Tc) 306W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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CSD16327Q3
Texas Instruments, N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™
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FDV301N
ON Semiconductor, N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23,
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SI1012-TP
Micro Commercial Co, N-Channel 20V 500mA (Tc) 150mW (Tc) Surface Mount SOT-523,
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IPA60R060P7XKSA1
Infineon Technologies, N-Channel 600V 48A (Tc) 29W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
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SIJA58ADP-T1-GE3
Vishay Siliconix, N-Channel 40V 32.3A (Ta), 109A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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RS1E200BNTB
Rohm Semiconductor, N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,
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NVD6824NLT4G
ON Semiconductor, N-Channel 100V 8.5A (Ta), 41A (Tc) 3.9W (Ta), 90W (Tc) Surface Mount DPAK,
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STU6N60M2
STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ II Plus
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FDPF14N30
ON Semiconductor, N-Channel 300V 14A (Tc) 35W (Tc) Through Hole TO-220F, UniFET™
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SIR882ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STD7ANM60N
STMicroelectronics, N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II
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