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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN6069SE-13
Diodes Incorporated, N-Channel 60V 4.3A (Ta), 10A (Tc) 2.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
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DMTH6010SK3-13
Diodes Incorporated, N-Channel 60V 16.3A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252,
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STW20N90K5
STMicroelectronics, N-Channel 900V 20A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ K5
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BUK662R7-55C,118
Nexperia USA Inc., N-Channel 55V 120A (Tc) 306W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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STS8N6LF6AG
STMicroelectronics, N-Channel 60V 8A (Ta) 3.2W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101, STripFET™ F6
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FCP11N60
ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™
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IPD90N10S4L06ATMA1
Infineon Technologies, N-Channel 100V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™
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NDT3055L
ON Semiconductor, N-Channel 60V 4A (Ta) 3W (Ta) Surface Mount SOT-223-4,
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FDPF12N50NZ
ON Semiconductor, N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO-220F, UniFET-II™
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SIHB22N60AE-GE3
Vishay Siliconix, N-Channel 600V 20A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),
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FQB50N06LTM
ON Semiconductor, N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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STD60N55F3
STMicroelectronics, N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III
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