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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRF820APBF
Vishay Siliconix, N-Channel 500V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB,
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STB45NF06T4
STMicroelectronics, N-Channel 60V 38A (Tc) 80W (Tc) Surface Mount D2PAK, STripFET™ II
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IXFK120N20
IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™
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NTMS4816NR2G
ON Semiconductor, N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC,
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FDD86540
ON Semiconductor, N-Channel 60V 21.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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MTD3055VL
ON Semiconductor, N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,
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SIA432DJ-T1-GE3
Vishay Siliconix, N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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FQPF9N50CF
ON Semiconductor, N-Channel 500V 9A (Tc) 44W (Tc) Through Hole TO-220F, FRFET®
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SSM6H19NU,LF
Toshiba Semiconductor and Storage, N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2), U-MOSVII-H
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SISH472DN-T1-GE3
Vishay Siliconix, N-Channel 30V 15A (Ta), 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®
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IRFZ44RPBF
Vishay Siliconix, N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB,
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TSM060N03ECP ROG
Taiwan Semiconductor Corporation, N-Channel 30V 70A (Tc) 54W (Tc) Surface Mount TO-252, (D-Pak),
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