Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA432DJ-T1-GE3

SIA432DJ-T1-GE3

SIA432DJ-T1-GE3

Part NumberSIA432DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 12A SC70-6

DatasheetSIA432DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA432DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA432DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA432DJ-T1-GE3.
We are offering SIA432DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA432DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA432DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA432DJ-T1-GE3 - Related Products

	BUK7E2R6-60E,127	Nexperia USA Inc., N-Channel 60V 120A (Tc) 349W (Tc) Through Hole I2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	BUK9610-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTMFS5C426NT1G	ON Semiconductor, N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IRLZ44ZSTRLPBF	Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK, HEXFET®	View
	NTLUS030N03CTAG	ON Semiconductor, N-Channel 30V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™	View
	DMG4800LK3-13	Diodes Incorporated, N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3,	View
	IRF200B211	Infineon Technologies, N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	TSM85N10CZ C0G	Taiwan Semiconductor Corporation, N-Channel 100V 81A (Tc) 210W (Tc) Through Hole TO-220,	View
	IXTF02N450	IXYS, N-Channel 4500V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™,	View
	IRFBC40LCPBF	Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	SIR878BDP-T1-RE3	Vishay Siliconix, N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	NTMS7N03R2G	ON Semiconductor, N-Channel 30V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC,	View

SIA432DJ-T1-GE3 - Tags

SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 PDF SIA432DJ-T1-GE3 datasheet SIA432DJ-T1-GE3 specification SIA432DJ-T1-GE3 image SIA432DJ-T1-GE3 India Renesas Electronics India SIA432DJ-T1-GE3 buy SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 price SIA432DJ-T1-GE3 distributor SIA432DJ-T1-GE3 supplier SIA432DJ-T1-GE3 wholesales