HUF76609D3ST
HUF76609D3ST
Part Number HUF76609D3ST
Description MOSFET N-CH 100V 10A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA
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HUF76609D3ST - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet HUF76609D3S
Standard Package 2500
Manufacturer ON Semiconductor
Series UltraFET™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 425pF @ 25V
FET Feature -
Power Dissipation (Max) 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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