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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB4310PbF, IRFS(L)4310PbF
Standard Package 800
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIR882ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SIHU4N80E-GE3
Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251),
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DMN61D9UWQ-13
Diodes Incorporated, N-Channel 60V 400mA (Ta) 440mW (Ta) Surface Mount SOT-323,
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PMV213SN,215
Nexperia USA Inc., N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount TO-236AB, TrenchMOS™
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AON6284
Alpha & Omega Semiconductor Inc., N-Channel 80V 24A (Ta), 78A (Tc) 7.4W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6),
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CSD18535KTTT
Texas Instruments, N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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FDMS8820
ON Semiconductor, N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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NTB5405NT4G
ON Semiconductor, N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D2PAK,
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IPP076N12N3GXKSA1
Infineon Technologies, N-Channel 120V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3, OptiMOS™
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AON7522E
Alpha & Omega Semiconductor Inc., N-Channel 30V 21A (Ta), 34A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-DFN (3x3),
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TK6A80E,S4X
Toshiba Semiconductor and Storage, N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS, π-MOSVIII
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FCP125N65S3R0
ON Semiconductor, N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-220-3, SuperFET® III
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