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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB4610PbF, IRFS(L)4610PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3004TRL7PP
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SI1050X-T1-GE3
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IRL3705NPBF
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ON Semiconductor, N-Channel 105V 5.9A (Ta), 41A (Tc) 135W (Tc) Through Hole TO-220-3, PowerTrench®
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Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),
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STP170N8F7
STMicroelectronics, N-Channel 80V 120A (Tc) 250W (Tc) Through Hole TO-220, STripFET™ F7
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