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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB4610PbF, IRFS(L)4610PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SSM6K341NU,LF
Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H
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BSC014N04LSATMA1
Infineon Technologies, N-Channel 40V 32A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount SuperSO8, OptiMOS™
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ZXMN6A11GTA
Diodes Incorporated, N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223,
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SI3134KL-TP
Micro Commercial Co, Surface Mount SOT-883,
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SIHB30N60E-GE3
Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK,
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IPI086N10N3GXKSA1
Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3, OptiMOS™
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APT38F80L
Microsemi Corporation, N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole TO-264 [L], POWER MOS 8™
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IRLML0040TRPBF
Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
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FDP51N25
ON Semiconductor, N-Channel 250V 51A (Tc) 320W (Tc) Through Hole TO-220-3, UniFET™
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SQS484EN-T1_GE3
Vishay Siliconix, N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
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APT30M70BVRG
Microsemi Corporation, N-Channel 300V 48A (Tc) 370W (Tc) Through Hole TO-247 [B], POWER MOS V®
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SI2312CDS-T1-GE3
Vishay Siliconix, N-Channel 20V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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