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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB4610PbF, IRFS(L)4610PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ20PBF
Vishay Siliconix, N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-220AB,
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FQPF27N25
ON Semiconductor, N-Channel 250V 14A (Tc) 55W (Tc) Through Hole TO-220F, QFET®
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IRF644STRLPBF
Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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STD7NM80
STMicroelectronics, N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™
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STB120N4F6
STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D2PAK, DeepGATE™, STripFET™ VI
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IRLB3813PBF
Infineon Technologies, N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
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BUK9Y40-55B,115
Nexperia USA Inc., N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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RD3S100CNTL1
Rohm Semiconductor, N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252,
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FDB2614
ON Semiconductor, N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®
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BSC052N03LSATMA1
Infineon Technologies, N-Channel 30V 17A (Ta), 57A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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DMN3016LFDE-13
Diodes Incorporated, N-Channel 30V 10A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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DMN2004WK-7
Diodes Incorporated, N-Channel 20V 540mA (Ta) 200mW (Ta) Surface Mount SOT-323, Automotive, AEC-Q101
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