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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SI3464DV-T1-GE3
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FDN337N
ON Semiconductor, N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
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SIA108DJ-T1-GE3
Vishay Siliconix, N-Channel 80V 6.6A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV
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STD2N80K5
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ZVN0545A
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BSZ0901NSATMA1
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STP9NK50Z
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SUD35N10-26P-GE3
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ZVN4525ZTA
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IXFH13N80
IXYS, N-Channel 800V 13A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
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STD11N60DM2
STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2
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