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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFB3607PBF
Infineon Technologies, N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®
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FQB44N10TM
ON Semiconductor, N-Channel 100V 43.5A (Tc) 3.75W (Ta), 146W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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DMT3004LPS-13
Diodes Incorporated, N-Channel 30V 21A (Ta), 140A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount PowerDI5060-8,
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2N7002K
ON Semiconductor, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23 (TO-236AB),
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IXFR80N50Q3
IXYS, N-Channel 500V 50A (Tc) 570W (Tc) Through Hole ISOPLUS247™, HiPerFET™
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SQS484ENW-T1_GE3
Vishay Siliconix, N-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
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VN0606L-G
Microchip Technology, N-Channel 60V 330mA (Tj) 1W (Tc) Through Hole TO-92-3,
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NTJS4405NT1G
ON Semiconductor, N-Channel 25V 1A (Ta) 630mW (Ta) Surface Mount SC-88/SC70-6/SOT-363,
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IRLTS6342TRPBF
Infineon Technologies, N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®
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DMN4800LSS-13
Diodes Incorporated, N-Channel 30V 9A (Ta) 1.46W (Ta) Surface Mount 8-SOP,
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DMNH6008SCTQ
Diodes Incorporated, N-Channel 60V 130A (Tc) 210W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101
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CSD18536KTTT
Texas Instruments, N-Channel 60V 200A (Ta), 349A (Tc) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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