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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STF10N80K5
STMicroelectronics, N-Channel 800V 9A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™
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SI2308BDS-T1-E3
Vishay Siliconix, N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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SSM3K318R,LF
Toshiba Semiconductor and Storage, N-Channel 60V 2.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV
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IRF620STRRPBF
Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK,
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STD5N60DM2
STMicroelectronics, N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ DM2
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TK14E65W5,S1X
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220, DTMOSIV
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FDT86246L
ON Semiconductor, N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4, PowerTrench®
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CSD16415Q5T
Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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AOD9N50
Alpha & Omega Semiconductor Inc., N-Channel 500V 9A (Tc) 178W (Tc) Surface Mount TO-252, (D-Pak),
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SIRA12DP-T1-GE3
Vishay Siliconix, N-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FDD3N40TM
ON Semiconductor, N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount D-Pak, UniFET™
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IRFD120PBF
Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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