IXFH26N60P
IXFH26N60P
Part Number IXFH26N60P Manufacturer IXYS Description MOSFET N-CH 600V 26A TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH)
To learn about the specification of IXFH26N60P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFH26N60P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFH26N60P.
We are offering IXFH26N60P for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IXFH26N60P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(H,T,V)26N60P/PS Standard Package 30 Manufacturer IXYS Series PolarHV™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3
IXFH26N60P - Related ProductsMore >>
NTTFS4C13NTAG ON Semiconductor, N-Channel 30V 7.2A (Ta) 780mW (Ta), 21.5W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
IRLML0040TRPBF Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
PMV40UN2R Nexperia USA Inc., N-Channel 30V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
IXTP50N25T IXYS, N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-220AB,
View
IRFH3702TRPBF Infineon Technologies, N-Channel 30V 16A (Ta), 42A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3), HEXFET®
View
TPN8R903NL,LQ Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
SI7810DN-T1-GE3 Vishay Siliconix, N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
BSS123-7-F Diodes Incorporated, N-Channel 100V 170mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
TSM10N80CI C0G Taiwan Semiconductor Corporation, N-Channel 800V 9.5A (Tc) 48W (Tc) Through Hole ITO-220AB,
View
SIS438DN-T1-GE3 Vishay Siliconix, N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SI3134KL-TP Micro Commercial Co, Surface Mount SOT-883,
View
IRFR3806TRPBF Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D-Pak, HEXFET®
View
IXFH26N60P - Tags
English
