Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFJ20N85X

IXFJ20N85X

IXFJ20N85X

Part NumberIXFJ20N85X

ManufacturerIXYS

DescriptionMOSFET N-CH 850V 9.5A TO247

DatasheetIXFJ20N85X

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 850V 9.5A (Tc) 110W (Tc) Through Hole ISO TO-247-3

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IXFJ20N85X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFJ20N85X
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	850V
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1660pF @ 25V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISO TO-247-3
Package / Case	TO-247-3

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IXFJ20N85X - Tags

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