IXFN120N65X2
IXFN120N65X2
Part Number IXFN120N65X2
Manufacturer IXYS
Description MOSFET N-CH 650V 108A SOT-227
Package / Case SOT-227-4, miniBLOC
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 108A (Tc) 890W (Tc) Chassis Mount SOT-227B
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IXFN120N65X2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFN120N65X2
Standard Package 10
Manufacturer IXYS
Series HiPerFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 54A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 15500pF @ 25V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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