IXFQ50N50P3
IXFQ50N50P3
Part Number IXFQ50N50P3
Manufacturer IXYS
Description MOSFET N-CH 500V 50A TO-3P
Package / Case TO-3P-3, SC-65-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-3P
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IXFQ50N50P3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFx50N50P3
Standard Package 30
Manufacturer IXYS
Series HiPerFET™, Polar3™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4335pF @ 25V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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