Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFQ50N50P3

IXFQ50N50P3

IXFQ50N50P3

Part NumberIXFQ50N50P3

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 50A TO-3P

DatasheetIXFx50N50P3

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-3P

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IXFQ50N50P3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx50N50P3
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™, Polar3™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4335pF @ 25V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3

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