IXFR32N80Q3
IXFR32N80Q3
Part Number IXFR32N80Q3 Manufacturer IXYS Description MOSFET N-CH 800V 24A ISOPLUS247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 24A (Tc) 500W (Tc) Through Hole ISOPLUS247™
To learn about the specification of IXFR32N80Q3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFR32N80Q3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFR32N80Q3.
We are offering IXFR32N80Q3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IXFR32N80Q3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFR32N80Q3 Standard Package 30 Manufacturer IXYS Series HiPerFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6940pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3
IXFR32N80Q3 - Related ProductsMore >>
TSM650N15CS RLG Taiwan Semiconductor Corporation, N-Channel 150V 9A (Tc) 12.5W (Tc) Surface Mount 8-SOP,
View
BSS159NH6327XTSA2 Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
STP5N60M2 STMicroelectronics, N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole TO-220, MDmesh™ II Plus
View
STD12N50M2 STMicroelectronics, N-Channel 500V 10A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2
View
STP11N65M5 STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ V
View
2N7002ET1G ON Semiconductor, N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236),
View
IXTH67N10 IXYS, N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), MegaMOS™
View
SI7112DN-T1-GE3 Vishay Siliconix, N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SI2336DS-T1-GE3 Vishay Siliconix, N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
FQB5N60CTM-WS ON Semiconductor, N-Channel 600V 4.5A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
TK56A12N1,S4X Toshiba Semiconductor and Storage, N-Channel 120V 56A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
STWA68N60M6 STMicroelectronics, N-Channel 600V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads, MDmesh™ M6
View
IXFR32N80Q3 - Tags
English
