IXTH1N200P3
IXTH1N200P3
Part Number IXTH1N200P3 Manufacturer IXYS Description MOSFET N-CH 2000V 1A TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 2000V 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
To learn about the specification of IXTH1N200P3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXTH1N200P3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXTH1N200P3.
We are offering IXTH1N200P3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IXTH1N200P3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXTx1N200P3(HV) Standard Package 30 Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
IXTH1N200P3 - Related ProductsMore >>
DMN4468LSS-13 Diodes Incorporated, N-Channel 30V 10A (Ta) 1.52W (Ta) Surface Mount 8-SO,
View
IRFR3709ZTRPBF Infineon Technologies, N-Channel 30V 86A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
View
CSD18502KCS Texas Instruments, N-Channel 40V 100A (Tc) 259W (Tc) Through Hole TO-220-3, NexFET™
View
CSD16321Q5 Texas Instruments, N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
View
DN2530N3-G Microchip Technology, N-Channel 300V 175mA (Tj) 740mW (Ta) Through Hole TO-92 (TO-226),
View
SIHB10N40D-GE3 Vishay Siliconix, N-Channel 400V 10A (Tc) 147W (Tc) Surface Mount TO-263 (D²Pak),
View
IRFHM830TRPBF Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3), HEXFET®
View
NTMS4937NR2G ON Semiconductor, N-Channel 30V 8.6A (Ta) 810mW (Ta) Surface Mount 8-SOIC,
View
IXFH50N20 IXYS, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
SUM90330E-GE3 Vishay Siliconix, N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak), ThunderFET®
View
TN5325K1-G Microchip Technology, N-Channel 250V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
RK7002BMHZGT116 Rohm Semiconductor, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SST3, Automotive, AEC-Q101
View
IXTH1N200P3 - Tags
English
