IXTY1R6N100D2
IXTY1R6N100D2
Part Number IXTY1R6N100D2 Manufacturer IXYS Description MOSFET N-CH 1000V 1.6A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-252, (D-Pak)
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IXTY1R6N100D2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(Y,A,P)1R6N100D2 Standard Package 70 Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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