Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
BFY90	Central Semiconductor Corp, RF Transistor NPN 15V 25mA 1.4GHz 200mW Through Hole TO-72,	View
BFP420FH6327XTSA1	Infineon Technologies, RF Transistor NPN 5.5V 35mA 25GHz 160mW Surface Mount 4-TSFP,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
MT3S20TU(TE85L)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 900mW Surface Mount UFM,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
CPH6003A-TL-E	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
MAX2602ESA+	Maxim Integrated, RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount 8-SOIC-EP,	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)