Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
BFT25,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 2.3GHz 30mW Surface Mount TO-236AB (SOT23),	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
MMBTH24-7-F	Diodes Incorporated, RF Transistor NPN 40V 50mA 400MHz 300mW Surface Mount SOT-23-3,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
BFP405H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount SOT-343,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
NSVF6003SB6T1G	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH, Automotive, AEC-Q101	View
BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
BFP740ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 45GHz 160mW Surface Mount SOT-343,	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)