Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
55GN01MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP,	View
NSVMMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFU520R	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
BFU550R	NXP USA Inc., RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFR182WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT323-3,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)