MT3S111P(TE12L,F)
MT3S111P(TE12L,F)
Part Number MT3S111P(TE12L,F) Description RF TRANS NPN 6V 8GHZ PW-MINI Package / Case TO-243AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI
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MT3S111P(TE12L,F) - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S111P Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.25dB @ 1GHz Gain 10.5dB Power - Max 1W DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PW-MINI
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