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MT3S111P(TE12L,F)


MT3S111P(TE12L,F)

Part NumberMT3S111P(TE12L,F)

Manufacturer

Description

Datasheet

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MT3S111P(TE12L,F) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.25dB @ 1GHz
Gain10.5dB
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePW-MINI

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MT3S111P(TE12L,F) - Tags

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