Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.25dB @ 1GHz
Gain	10.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

BFS17NTA	Diodes Incorporated, RF Transistor NPN 11V 50mA 3.2GHz 330mW Surface Mount SOT-23-3,	View
2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
15GN03CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 200mW Surface Mount 3-CP,	View
BFP183E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT143-4,	View
2SC5646A-TL-H	ON Semiconductor, RF Transistor NPN 4V 30mA 10GHz ~ 12.5GHz 100mW Surface Mount 3-SSFP,	View
BFR182WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT323-3,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
BFP650FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 42GHz 500mW Surface Mount 4-TSFP,	View
BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
HFA3134IHZ96	Renesas Electronics America Inc., RF Transistor 2 NPN (Dual) 9V 26mA 8.5GHz Surface Mount SOT-23-6,	View

MT3S111P(TE12L,F)

Part NumberMT3S111P(TE12L,F)