Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
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BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
BFP720H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 25mA 45GHz 100mW Surface Mount SOT-343,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
KSP10BU	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)