Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
BFP196E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT143-4,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
2SC5488A-TL-H	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-SSFP,	View
BFU520WX	NXP USA Inc., RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
BFU590QX	NXP USA Inc., RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3,	View
2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
BFU730F,115	NXP USA Inc., RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)