Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
BFP720ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 43GHz 100mW Surface Mount SOT-343,	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
BFP196WNH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View

MT3S113P(TE12L,F)

Part NumberMT3S113P(TE12L,F)