Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113P
Standard Package	1000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View
BFU530WX	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
BFU520XAR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
MCH4020-TL-H	ON Semiconductor, RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mount 4-MCPH,	View
BFS481H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 20mA 8GHz 175mW Surface Mount P-SOT363-6,	View
BFP540ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini,	View
2N5179	Central Semiconductor Corp, RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View
BFP196WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View

MT3S113P(TE12L,F)

Part NumberMT3S113P(TE12L,F)