MT3S113P(TE12L,F)
MT3S113P(TE12L,F)
Part Number MT3S113P(TE12L,F)
Description RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Package / Case TO-243AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI
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MT3S113P(TE12L,F) - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S113P
Standard Package 1000
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 7.7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 10.5dB
Power - Max 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
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