Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	11.2GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	12.5dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
NSVMMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23,	View
BFS17NTA	Diodes Incorporated, RF Transistor NPN 11V 50mA 3.2GHz 330mW Surface Mount SOT-23-3,	View
BFR360FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
BFU730F,115	NXP USA Inc., RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP,	View
BFP640ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343,	View
BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFR93AE6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount SOT-23-3,	View
2N5770	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92,	View

MT3S113TU,LF

Part NumberMT3S113TU,LF