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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NX3008NBK
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 15V
FET Feature -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
HUF75645S3ST
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SI2336DS-T1-GE3
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SISS92DN-T1-GE3
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STD1NK60-1
STMicroelectronics, N-Channel 600V 1A (Tc) 30W (Tc) Through Hole I-PAK, SuperMESH™
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PSMN7R6-60BS,118
Nexperia USA Inc., N-Channel 60V 92A (Tc) 149W (Tc) Surface Mount D2PAK,
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IRFS7437TRL7PP
Infineon Technologies, N-Channel 40V 195A (Tc) 231W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™
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SQP120N10-3M8_GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-220AB,
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FDP12N60NZ
ON Semiconductor, N-Channel 600V 12A (Tc) 240W (Tc) Through Hole TO-220-3, UniFET-II™
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