Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NX3020NAKW
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.44nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 10V
FET Feature	-
Power Dissipation (Max)	260mW (Ta), 1.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70
Package / Case	SC-70, SOT-323

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IRF640SPBF	Vishay Siliconix, N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D2PAK,	View
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IRFPF50PBF	Vishay Siliconix, N-Channel 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3,	View
SIHG065N60E-GE3	Vishay Siliconix, N-Channel 600V 40A (Tc) 250W (Tc) Through Hole TO-247AC,	View
FDP80N06	ON Semiconductor, N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3, UniFET™	View
SI4116DY-T1-GE3	Vishay Siliconix, N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
IPB64N25S320ATMA1	Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View

NX3020NAKW,115

Part NumberNX3020NAKW,115