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R6030MNX

R6030MNX

Part NumberR6030MNX

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 600V 30A TO220FM

DatasheetR6030KNX

Package / CaseTO-220-3 Full Pack

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 90W (Tc) Through Hole TO-220FM

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R6030MNX - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	R6030KNX
Standard Package	500
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 25V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-3 Full Pack

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