Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGT8NS65D
Standard Package	50
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	8A
Current - Collector Pulsed (Icm)	12A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	65W
Switching Energy	-
Input Type	Standard
Gate Charge	13.5nC
Td (on/off) @ 25°C	17ns/69ns
Test Condition	400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)	40ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

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AUIRGDC0250	Infineon Technologies, IGBT 1200V 141A 543W Through Hole SUPER-220™ (TO-273AA),	View
STGD5H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 10A 83W Surface Mount DPAK,	View
IKA15N65F5XKSA1	Infineon Technologies, IGBT 650V 14A 33.3W Through Hole PG-TO220-FP, TrenchStop®	View
FGB40T65SPD-F085	ON Semiconductor, IGBT Trench Field Stop 650V 80A 267W Surface Mount TO-263AB (D²PAK),	View
IRG4PH40UDPBF	Infineon Technologies, IGBT 1200V 41A 160W Through Hole TO-247AC,	View
IKW75N65EH5XKSA1	Infineon Technologies, IGBT Trench 650V 90A 395W Through Hole PG-TO247-3, TrenchStop™	View
IRG4IBC30UDPBF	Infineon Technologies, IGBT 600V 17A 45W Through Hole TO-220AB Full-Pak,	View
IRG4PH20KDPBF	Infineon Technologies, IGBT 1200V 11A 60W Through Hole TO-247AC,	View

RGT8NS65DGC9

Part NumberRGT8NS65DGC9