RGT8NS65DGC9
RGT8NS65DGC9
Part Number RGT8NS65DGC9 Description IGBT Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT Trench Field Stop 650V 8A 65W Through Hole TO-262
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RGT8NS65DGC9 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet RGT8NS65D Standard Package 50 Manufacturer Rohm Semiconductor Series - Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 8A Current - Collector Pulsed (Icm) 12A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A Power - Max 65W Switching Energy - Input Type Standard Gate Charge 13.5nC Td (on/off) @ 25°C 17ns/69ns Test Condition 400V, 4A, 50Ohm, 15V Reverse Recovery Time (trr) 40ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262
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