Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTH00TK65D
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	200A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Power - Max	72W
Switching Energy	-
Input Type	Standard
Gate Charge	94nC
Td (on/off) @ 25°C	39ns/143ns
Test Condition	400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)	225ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

HGTG20N60B3	ON Semiconductor, IGBT 600V 40A 165W Through Hole TO-247-3,	View
IXBK55N300	IXYS, IGBT 3000V 130A 625W Through Hole TO-264, BIMOSFET™	View
IKW75N65EH5XKSA1	Infineon Technologies, IGBT Trench 650V 90A 395W Through Hole PG-TO247-3, TrenchStop™	View
STGD4M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK,	View
STGWA40H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247 Long Leads, HB	View
IRGP30B60KD-EP	Infineon Technologies, IGBT NPT 600V 60A 304W Through Hole TO-247AD,	View
FGAF40N60UFTU	ON Semiconductor, IGBT 600V 40A 100W Through Hole TO-3PF,	View
SGP07N120XKSA1	Infineon Technologies, IGBT NPT 1200V 16.5A 125W Through Hole PG-TO220-3,	View
IRG4BC40UPBF	Infineon Technologies, IGBT 600V 40A 160W Through Hole TO-220AB,	View
IXBA14N300HV	IXYS, IGBT NPT 3000V 38A 200W Surface Mount TO-263, BIMOSFET™	View
NGTB40N120FL2WAG	ON Semiconductor, IGBT Field Stop 1200V 160A 536W Through Hole TO-247-4L,	View
IKW50N65ES5XKSA1	Infineon Technologies, IGBT Trench 650V 80A 274W Through Hole PG-TO247-3, TrenchStop™	View

RGTH00TK65DGC11

Part NumberRGTH00TK65DGC11