Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RS1E200BNTB

RS1E200BNTB

RS1E200BNTB

Part NumberRS1E200BNTB

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 20A 8HSOP

DatasheetRS1E200BN

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

To learn about the specification of RS1E200BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RS1E200BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RS1E200BNTB.
We are offering RS1E200BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RS1E200BNTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RS1E200BN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 25W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN

RS1E200BNTB - Related Products

	IRFH3707TRPBF	Infineon Technologies, N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3), HEXFET®	View
	MMIX1F520N075T2	IXYS, N-Channel 75V 500A (Tc) 830W (Tc) Surface Mount 24-SMPD, GigaMOS™, TrenchT2™	View
	IRFH5250DTRPBF	Infineon Technologies, N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	R6020JNXC7G	Rohm Semiconductor, N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM,	View
	IRFBF20LPBF	Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK,	View
	STP4NK60Z	STMicroelectronics, N-Channel 600V 4A (Tc) 70W (Tc) Through Hole TO-220AB, SuperMESH™	View
	PSMN0R9-25YLDX	Nexperia USA Inc., N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IPD60R280CFD7ATMA1	Infineon Technologies, N-Channel 650V 9A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CFD7	View
	IRLR3410TRLPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®	View
	2N7002BKMB,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,	View
	FCU900N60Z	ON Semiconductor, N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK, SuperFET® II	View
	FDD9409L-F085	ON Semiconductor, N-Channel 40V 90A (Tc) 150W (Tj) Surface Mount TO-252, (D-Pak), PowerTrench®	View

RS1E200BNTB - Tags

RS1E200BNTB RS1E200BNTB PDF RS1E200BNTB datasheet RS1E200BNTB specification RS1E200BNTB image RS1E200BNTB India Renesas Electronics India RS1E200BNTB buy RS1E200BNTB RS1E200BNTB price RS1E200BNTB distributor RS1E200BNTB supplier RS1E200BNTB wholesales