Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RS1E200BNTB

RS1E200BNTB

RS1E200BNTB

Part NumberRS1E200BNTB

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 20A 8HSOP

DatasheetRS1E200BN

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

To learn about the specification of RS1E200BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RS1E200BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RS1E200BNTB.
We are offering RS1E200BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RS1E200BNTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RS1E200BN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 25W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN

RS1E200BNTB - Related Products

	BSC060N10NS3GATMA1	Infineon Technologies, N-Channel 100V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SIR878BDP-T1-RE3	Vishay Siliconix, N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SIR804DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	R6009JNXC7G	Rohm Semiconductor, N-Channel 600V 9A (Tc) 53W (Tc) Through Hole TO-220FM,	View
	SIS892DN-T1-GE3	Vishay Siliconix, N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BUK6C3R3-75C,118	Nexperia USA Inc., N-Channel 75V 181A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	BSC018NE2LSIATMA1	Infineon Technologies, N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	FDB2710	ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®	View
	DMN3065LW-7	Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323,	View
	IXFB120N50P2	IXYS, N-Channel 500V 120A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, PolarHV™	View
	TSM055N03PQ56 RLG	Taiwan Semiconductor Corporation, N-Channel 30V 80A (Tc) 74W (Tc) Surface Mount 8-PDFN (5x6),	View
	BSC097N06NSATMA1	Infineon Technologies, N-Channel 60V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View

RS1E200BNTB - Tags

RS1E200BNTB RS1E200BNTB PDF RS1E200BNTB datasheet RS1E200BNTB specification RS1E200BNTB image RS1E200BNTB India Renesas Electronics India RS1E200BNTB buy RS1E200BNTB RS1E200BNTB price RS1E200BNTB distributor RS1E200BNTB supplier RS1E200BNTB wholesales