Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RW1E025RPT2CR

RW1E025RPT2CR

RW1E025RPT2CR

Part NumberRW1E025RPT2CR

ManufacturerRohm Semiconductor

DescriptionMOSFET P-CH 30V 2.5A WEMT6

DatasheetRW1E025RP

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT

To learn about the specification of RW1E025RPT2CR, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RW1E025RPT2CR with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RW1E025RPT2CR.
We are offering RW1E025RPT2CR for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RW1E025RPT2CR - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RW1E025RP
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 10V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WEMT
Package / Case	SOT-563, SOT-666

RW1E025RPT2CR - Related Products

	SI4447DY-T1-E3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SIS443DN-T1-GE3	Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRFR9210TRPBF	Vishay Siliconix, P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	TSM150P03PQ33 RGG	Taiwan Semiconductor Corporation, P-Channel 30V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3x3),	View
	FDD9511L-F085	ON Semiconductor, P-Channel 40V 25A (Tc) 48.4W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	RSR025P03TL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	SSM6J511NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 14A (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View
	RRR030P03TL	Rohm Semiconductor, P-Channel 30V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	SQ4483EY-T1_GE3	Vishay Siliconix, P-Channel 30V 30A (Tc) 7W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	DMP4025LSS-13	Diodes Incorporated, P-Channel 40V 6A (Ta) 1.52W (Ta) Surface Mount 8-SO,	View
	SSM6J505NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 12A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	IRF9540PBF	Vishay Siliconix, P-Channel 100V 19A (Tc) 150W (Tc) Through Hole TO-220AB,	View

RW1E025RPT2CR - Tags

RW1E025RPT2CR RW1E025RPT2CR PDF RW1E025RPT2CR datasheet RW1E025RPT2CR specification RW1E025RPT2CR image RW1E025RPT2CR India Renesas Electronics India RW1E025RPT2CR buy RW1E025RPT2CR RW1E025RPT2CR price RW1E025RPT2CR distributor RW1E025RPT2CR supplier RW1E025RPT2CR wholesales