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RW1E025RPT2CR

RW1E025RPT2CR

Part NumberRW1E025RPT2CR

ManufacturerRohm Semiconductor

DescriptionMOSFET P-CH 30V 2.5A WEMT6

DatasheetRW1E025RP

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT

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RW1E025RPT2CR - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RW1E025RP
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 10V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WEMT
Package / Case	SOT-563, SOT-666

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