Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2300DS-T1-GE3

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Part NumberSI2300DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 3.6A SOT-23

DatasheetSI2300DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2300DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2300DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2300DS-T1-GE3.
We are offering SI2300DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2300DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2300DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	68mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	320pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2300DS-T1-GE3 - Related Products

	PSMN5R2-60YLX	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRF6648TRPBF	Infineon Technologies, N-Channel 60V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET®	View
	FDD8782	ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	IRFR9N20DTRPBF	Infineon Technologies, N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak, HEXFET®	View
	IRFBC30STRLPBF	Vishay Siliconix, N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	SIHU5N50D-GE3	Vishay Siliconix, N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-251,	View
	SIHJ10N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8,	View
	TK290A65Y,S4X	Toshiba Semiconductor and Storage, N-Channel 650V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS, DTMOSV	View
	SSM3K35CTC,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSIII	View
	FDC86244	ON Semiconductor, N-Channel 150V 2.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMN5L06TK-7	Diodes Incorporated, N-Channel 50V 280mA (Ta) 150mW (Ta) Surface Mount SOT-523,	View
	CSD16325Q5	Texas Instruments, N-Channel 25V 33A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View

SI2300DS-T1-GE3 - Tags

SI2300DS-T1-GE3 SI2300DS-T1-GE3 PDF SI2300DS-T1-GE3 datasheet SI2300DS-T1-GE3 specification SI2300DS-T1-GE3 image SI2300DS-T1-GE3 India Renesas Electronics India SI2300DS-T1-GE3 buy SI2300DS-T1-GE3 SI2300DS-T1-GE3 price SI2300DS-T1-GE3 distributor SI2300DS-T1-GE3 supplier SI2300DS-T1-GE3 wholesales