Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

Part NumberSI2316BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 4.5A SOT23-3

DatasheetSI2316BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316BDS-T1-GE3.
We are offering SI2316BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316BDS-T1-GE3 - Related Products

	IPB026N06NATMA1	Infineon Technologies, N-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STB12NK80ZT4	STMicroelectronics, N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH™	View
	STP260N4F7	STMicroelectronics, N-Channel 40V 120A (Tc) 235W (Tc) Through Hole TO-220, STripFET™	View
	TSM3446CX6 RFG	Taiwan Semiconductor Corporation, N-Channel 20V 5.3A (Tc) 2W (Ta) Surface Mount SOT-26,	View
	IRFS4321TRLPBF	Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®	View
	STD1NK60T4	STMicroelectronics, N-Channel 600V 1A (Tc) 30W (Tc) Surface Mount DPAK, SuperMESH™	View
	PSMN5R6-100BS,118	Nexperia USA Inc., N-Channel 100V 100A (Tc) 306W (Tc) Surface Mount D2PAK,	View
	STF9HN65M2	STMicroelectronics, N-Channel 650V 5.5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ M2	View
	DMTH6004SCTBQ-13	Diodes Incorporated, N-Channel 60V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101	View
	FDP047N10	ON Semiconductor, N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220-3, PowerTrench®	View
	BUK9230-100B,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTD6416ANLT4G	ON Semiconductor, N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK,	View

SI2316BDS-T1-GE3 - Tags

SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 PDF SI2316BDS-T1-GE3 datasheet SI2316BDS-T1-GE3 specification SI2316BDS-T1-GE3 image SI2316BDS-T1-GE3 India Renesas Electronics India SI2316BDS-T1-GE3 buy SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 price SI2316BDS-T1-GE3 distributor SI2316BDS-T1-GE3 supplier SI2316BDS-T1-GE3 wholesales