Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Part NumberSI2342DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 6A SOT-23

DatasheetSI2342DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2342DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2342DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2342DS-T1-GE3.
We are offering SI2342DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2342DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2342DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2342DS-T1-GE3 - Related Products

	BSP88H6327XTSA1	Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	SQJQ402E-T1_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®	View
	AONS32100	Alpha & Omega Semiconductor Inc., N-Channel 25V Surface Mount 8-DFN-EP (5x6),	View
	BUK7Y1R7-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 294W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	IPB029N06N3GATMA1	Infineon Technologies, N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STF12N50M2	STMicroelectronics, N-Channel 500V 10A (Tc) 85W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	BUK9215-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 115W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	VN2460N8-G	Microchip Technology, N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	STV240N75F3	STMicroelectronics, N-Channel 75V 240A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III	View
	SISS98DN-T1-GE3	Vishay Siliconix, N-Channel 200V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®	View
	FDMC8554	ON Semiconductor, N-Channel 20V 16.5A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IRFP22N60KPBF	Vishay Siliconix, N-Channel 600V 22A (Tc) 370W (Tc) Through Hole TO-247-3,	View

SI2342DS-T1-GE3 - Tags

SI2342DS-T1-GE3 SI2342DS-T1-GE3 PDF SI2342DS-T1-GE3 datasheet SI2342DS-T1-GE3 specification SI2342DS-T1-GE3 image SI2342DS-T1-GE3 India Renesas Electronics India SI2342DS-T1-GE3 buy SI2342DS-T1-GE3 SI2342DS-T1-GE3 price SI2342DS-T1-GE3 distributor SI2342DS-T1-GE3 supplier SI2342DS-T1-GE3 wholesales