Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Part NumberSI2342DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 6A SOT-23

DatasheetSI2342DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2342DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2342DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2342DS-T1-GE3.
We are offering SI2342DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2342DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2342DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2342DS-T1-GE3 - Related Products

	BSC014N04LSTATMA1	Infineon Technologies, N-Channel 40V 33A (Ta), 100A (Tc) 3W (Ta), 115W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™	View
	STF9N65M2	STMicroelectronics, N-Channel 650V 5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™	View
	NTTFS4C25NTAG	ON Semiconductor, N-Channel 30V 5A (Ta), 27A (Tc) 690mW (Ta), 20.2W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	PSMN2R0-30BL,118	Nexperia USA Inc., N-Channel 30V 100A (Tc) 211W (Tc) Surface Mount D2PAK,	View
	2N7002WT1G	ON Semiconductor, N-Channel 60V 310mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),	View
	SUD19N20-90-E3	Vishay Siliconix, N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	BSC265N10LSFGATMA1	Infineon Technologies, N-Channel 100V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	TSM160N10LCR RLG	Taiwan Semiconductor Corporation, N-Channel 100V 46A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	2N7002BKW,115	Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™	View
	STD16NF06T4	STMicroelectronics, N-Channel 60V 16A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II	View
	TK3R1A04PL,S4X	Toshiba Semiconductor and Storage, N-Channel 40V 82A (Tc) 36W (Tc) Through Hole TO-220SIS, U-MOSIX-H	View
	FDPF2710T	ON Semiconductor, N-Channel 250V 25A (Tc) 62.5W (Tc) Through Hole TO-220F, PowerTrench®	View

SI2342DS-T1-GE3 - Tags

SI2342DS-T1-GE3 SI2342DS-T1-GE3 PDF SI2342DS-T1-GE3 datasheet SI2342DS-T1-GE3 specification SI2342DS-T1-GE3 image SI2342DS-T1-GE3 India Renesas Electronics India SI2342DS-T1-GE3 buy SI2342DS-T1-GE3 SI2342DS-T1-GE3 price SI2342DS-T1-GE3 distributor SI2342DS-T1-GE3 supplier SI2342DS-T1-GE3 wholesales