Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3410DV-T1-GE3

SI3410DV-T1-GE3

SI3410DV-T1-GE3

Part NumberSI3410DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6-TSOP

DatasheetSI3410DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3410DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3410DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3410DV-T1-GE3.
We are offering SI3410DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3410DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3410DV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3410DV-T1-GE3 - Related Products

	NVD3055L170T4G	ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta) Surface Mount DPAK,	View
	SIHB15N50E-GE3	Vishay Siliconix, N-Channel 500V 14.5A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263),	View
	BUK9Y14-80E,115	Nexperia USA Inc., N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	SIS472DN-T1-GE3	Vishay Siliconix, N-Channel 30V 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IPB320N20N3GATMA1	Infineon Technologies, N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STP85NF55	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View
	SSM3K7002KFU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSVII-H	View
	FCPF1300N80Z	ON Semiconductor, N-Channel 800V 4A (Tc) 24W (Tc) Through Hole TO-220F, SuperFET® II	View
	SI7880ADP-T1-E3	Vishay Siliconix, N-Channel 30V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	R6003KND3TL1	Rohm Semiconductor, N-Channel 600V 3A (Tc) 44W (Tc) Surface Mount TO-252,	View
	DN1509K1-G	Microchip Technology, N-Channel 90V 200mA (Tj) 490mW (Ta) Surface Mount SOT-23-5,	View
	STD40NF10	STMicroelectronics, N-Channel 100V 50A (Tc) 125W (Tc) Surface Mount DPAK, STripFET™ II	View

SI3410DV-T1-GE3 - Tags

SI3410DV-T1-GE3 SI3410DV-T1-GE3 PDF SI3410DV-T1-GE3 datasheet SI3410DV-T1-GE3 specification SI3410DV-T1-GE3 image SI3410DV-T1-GE3 India Renesas Electronics India SI3410DV-T1-GE3 buy SI3410DV-T1-GE3 SI3410DV-T1-GE3 price SI3410DV-T1-GE3 distributor SI3410DV-T1-GE3 supplier SI3410DV-T1-GE3 wholesales