Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

Part NumberSI3459BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.9A 6-TSOP

DatasheetSI3459BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3459BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3459BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3459BDV-T1-GE3.
We are offering SI3459BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3459BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3459BDV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3459BDV-T1-GE3 - Related Products

	SI3457CDV-T1-E3	Vishay Siliconix, P-Channel 30V 5.1A (Tc) 3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RSJ250P10TL	Rohm Semiconductor, P-Channel 100V 25A (Ta) 50W (Tc) Surface Mount LPTS,	View
	SQ7415AEN-T1_GE3	Vishay Siliconix, P-Channel 60V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI3483CDV-T1-E3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount, TrenchFET®	View
	SSM3J132TU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	FDC365P	ON Semiconductor, P-Channel 35V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	IRF9Z30PBF	Vishay Siliconix, P-Channel 50V 18A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	DMS2085LSD-13	Diodes Incorporated, P-Channel 20V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO,	View
	SISS65DN-T1-GE3	Vishay Siliconix, P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III	View
	NTR4101PT1H	ON Semiconductor, P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3,	View
	IXTT48P20P	IXYS, P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO-268, PolarP™	View
	PMXB120EPEZ	Nexperia USA Inc., P-Channel 30V 2.4A (Ta) 400mW (Ta), 8.3W (Tc) Surface Mount DFN1010D-3,	View

SI3459BDV-T1-GE3 - Tags

SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 PDF SI3459BDV-T1-GE3 datasheet SI3459BDV-T1-GE3 specification SI3459BDV-T1-GE3 image SI3459BDV-T1-GE3 India Renesas Electronics India SI3459BDV-T1-GE3 buy SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 price SI3459BDV-T1-GE3 distributor SI3459BDV-T1-GE3 supplier SI3459BDV-T1-GE3 wholesales