SI3493BDV-T1-E3
SI3493BDV-T1-E3
Part Number SI3493BDV-T1-E3 Description MOSFET P-CH 20V 8A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3493BDV-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3493BDV-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3493BDV-T1-E3.
We are offering SI3493BDV-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3493BDV-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3493BDV Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27.5mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 43.5nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 10V FET Feature - Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
SI3493BDV-T1-E3 - Related ProductsMore >>
SI4421DY-T1-GE3 Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
IRFR5305TRLPBF Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
IRLMS6802TRPBF Infineon Technologies, P-Channel 20V 5.6A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
View
SI7117DN-T1-GE3 Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDME510PZT ON Semiconductor, P-Channel 20V 6A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®
View
PMZB950UPELYL Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,
View
SI6423DQ-T1-E3 Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®
View
ZXMP10A16KTC Diodes Incorporated, P-Channel 100V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
View
DMP1555UFA-7B Diodes Incorporated, P-Channel 12V 200mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,
View
IRF6218PBF Infineon Technologies, P-Channel 150V 27A (Tc) 250W (Tc) Through Hole TO-220AB, HEXFET®
View
SIA447DJ-T1-GE3 Vishay Siliconix, P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
PMV35EPER Nexperia USA Inc., P-Channel 30V 5.3A (Ta) 480mW (Ta), 1.2W (Tc) Surface Mount TO-236AB,
View
SI3493BDV-T1-E3 - Tags
English
