Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays/ SI3552DV-T1-GE3

SI3552DV-T1-GE3

SI3552DV-T1-GE3

Part NumberSI3552DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 30V 6-TSOP

DatasheetSI3552DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

To learn about the specification of SI3552DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3552DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3552DV-T1-GE3.
We are offering SI3552DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3552DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI3552DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.5A
Rds On (Max) @ Id, Vgs	105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.15W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP
Base Part Number	SI3552

SI3552DV-T1-GE3 - Related Products

	PMCXB900UEZ	Nexperia USA Inc., Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6, TrenchFET®	View
	DMG6602SVTQ-7	Diodes Incorporated, Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-26,	View
	SIA519EDJ-T1-GE3	Vishay Siliconix, Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual, TrenchFET®	View
	VT6M1T2CR	Rohm Semiconductor, Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6,	View
	FDG6332C	ON Semiconductor, Mosfet Array N and P-Channel 20V 700mA, 600mA 300mW Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	ZXMHC6A07T8TA	Diodes Incorporated, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.6A, 1.3A 1.3W Surface Mount SM8,	View
	SSM6L09FUTE85LF	Toshiba Semiconductor and Storage, Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6,	View
	AO4614B	Alpha & Omega Semiconductor Inc., Mosfet Array N and P-Channel 40V 6A, 5A 2W Surface Mount 8-SO,	View
	DMC2020USD-13	Diodes Incorporated, Mosfet Array N and P-Channel 20V 7.8A, 6.3A 1.8W Surface Mount 8-SO,	View
	DMG4511SK4-13	Diodes Incorporated, Mosfet Array N and P-Channel, Common Drain 35V 5.3A, 5A 1.54W Surface Mount TO-252-4L,	View
	SIA517DJ-T1-GE3	Vishay Siliconix, Mosfet Array N and P-Channel 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual, TrenchFET®	View
	ZXMHC6A07N8TC	Diodes Incorporated, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SOP,	View

SI3552DV-T1-GE3 - Tags

SI3552DV-T1-GE3 SI3552DV-T1-GE3 PDF SI3552DV-T1-GE3 datasheet SI3552DV-T1-GE3 specification SI3552DV-T1-GE3 image SI3552DV-T1-GE3 India Renesas Electronics India SI3552DV-T1-GE3 buy SI3552DV-T1-GE3 SI3552DV-T1-GE3 price SI3552DV-T1-GE3 distributor SI3552DV-T1-GE3 supplier SI3552DV-T1-GE3 wholesales