Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4103DY-T1-GE3

SI4103DY-T1-GE3

SI4103DY-T1-GE3

Part NumberSI4103DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V SO-8

DatasheetSI4103DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

To learn about the specification of SI4103DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4103DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4103DY-T1-GE3.
We are offering SI4103DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4103DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4103DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4103DY-T1-GE3 - Related Products

	CSD22202W15	Texas Instruments, P-Channel 8V 10A (Ta) 1.5W (Ta) Surface Mount 9-DSBGA, NexFET™	View
	SI2333DDS-T1-GE3	Vishay Siliconix, P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SSM6J507NU,LF	Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	SI8413DB-T1-E1	Vishay Siliconix, P-Channel 20V 4.8A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	FQP4P40	ON Semiconductor, P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3, QFET®	View
	TP0610K-T1-E3	Vishay Siliconix, P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	AO3419	Alpha & Omega Semiconductor Inc., P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SUD50P06-15L-E3	Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SI7465DP-T1-GE3	Vishay Siliconix, P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI7111EDN-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen III	View
	RT1A045APTCR	Rohm Semiconductor, P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST,	View
	IRF7205TRPBF	Infineon Technologies, P-Channel 30V 4.6A (Ta) 2.5W (Tc) Surface Mount 8-SO, HEXFET®	View

SI4103DY-T1-GE3 - Tags

SI4103DY-T1-GE3 SI4103DY-T1-GE3 PDF SI4103DY-T1-GE3 datasheet SI4103DY-T1-GE3 specification SI4103DY-T1-GE3 image SI4103DY-T1-GE3 India Renesas Electronics India SI4103DY-T1-GE3 buy SI4103DY-T1-GE3 SI4103DY-T1-GE3 price SI4103DY-T1-GE3 distributor SI4103DY-T1-GE3 supplier SI4103DY-T1-GE3 wholesales