SI4488DY-T1-E3
SI4488DY-T1-E3
Part Number SI4488DY-T1-E3 Description MOSFET N-CH 150V 3.5A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SO
To learn about the specification of SI4488DY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4488DY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4488DY-T1-E3.
We are offering SI4488DY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4488DY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4488DY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.56W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4488DY-T1-E3 - Related ProductsMore >>
PSMN017-30EL,127 Nexperia USA Inc., N-Channel 30V 32A (Tc) 47W (Tc) Through Hole I2PAK,
View
TK8A10K3,S5Q Toshiba Semiconductor and Storage, N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS, U-MOSIV
View
FDS86106 ON Semiconductor, N-Channel 100V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
RU1C001UNTCL Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,
View
SIRA18DP-T1-GE3 Vishay Siliconix, N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SQM85N15-19_GE3 Vishay Siliconix, N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
FDB3632-F085 ON Semiconductor, N-Channel 100V 12A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®
View
CSD19531KCS Texas Instruments, N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3, NexFET™
View
IPB65R190CFDATMA1 Infineon Technologies, N-Channel 650V 17.5A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
SSM6K513NU,LF Toshiba Semiconductor and Storage, N-Channel 30V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H
View
IPS80R750P7AKMA1 Infineon Technologies, N-Channel 800V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
IPB80N08S2L07ATMA1 Infineon Technologies, N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
SI4488DY-T1-E3 - Tags
English
