SI6423DQ-T1-GE3
SI6423DQ-T1-GE3
Part Number SI6423DQ-T1-GE3 Description MOSFET P-CH 12V 8.2A 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
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SI6423DQ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si6423DQ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 8.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1.05W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width)
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