SI6423DQ-T1-GE3
SI6423DQ-T1-GE3
Part Number SI6423DQ-T1-GE3
Description MOSFET P-CH 12V 8.2A 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
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Lead Time To be Confirmed
Detailed Description P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
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SI6423DQ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si6423DQ
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.05W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
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