Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8817DB-T2-E1

SI8817DB-T2-E1

SI8817DB-T2-E1

Part NumberSI8817DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V MICROFOOT

DatasheetSi8817DB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8817DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8817DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8817DB-T2-E1.
We are offering SI8817DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8817DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8817DB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	76mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	615pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8817DB-T2-E1 - Related Products

	SI2301BDS-T1-GE3	Vishay Siliconix, P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQJ423EP-T1_GE3	Vishay Siliconix, P-Channel 40V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SQM40081EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SQD19P06-60L_GE3	Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, TrenchFET®	View
	SSM6J214FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 30V 3.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View
	SIS427EDN-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RW1E015RPT2R	Rohm Semiconductor, P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT,	View
	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	SQJ409EP-T1_GE3	Vishay Siliconix, P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRF5305PBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®	View
	PMV27UPER	Nexperia USA Inc., P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	FDMC510P	ON Semiconductor, P-Channel 20V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View

SI8817DB-T2-E1 - Tags

SI8817DB-T2-E1 SI8817DB-T2-E1 PDF SI8817DB-T2-E1 datasheet SI8817DB-T2-E1 specification SI8817DB-T2-E1 image SI8817DB-T2-E1 India Renesas Electronics India SI8817DB-T2-E1 buy SI8817DB-T2-E1 SI8817DB-T2-E1 price SI8817DB-T2-E1 distributor SI8817DB-T2-E1 supplier SI8817DB-T2-E1 wholesales