SIDR610DP-T1-GE3
SIDR610DP-T1-GE3
Part Number SIDR610DP-T1-GE3
Description MOSFET N-CHAN 200V PPAK SO-8DC
Package / Case PowerPAK® SO-8
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 8.9A (Ta), 39.6A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
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SIDR610DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR610DP
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 100V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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