Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

Part NumberSIHB22N60ET1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 21A TO263

DatasheetSiHB22N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SIHB22N60ET1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB22N60ET1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB22N60ET1-GE3.
We are offering SIHB22N60ET1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB22N60ET1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB22N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB22N60ET1-GE3 - Related Products

	IRL540NSTRLPBF	Infineon Technologies, N-Channel 100V 36A (Tc) 3.8W (Ta), 140W (Tc) Surface Mount D2PAK, HEXFET®	View
	SSM3K15ACTC,L3F	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSIII	View
	FDB3632-F085	ON Semiconductor, N-Channel 100V 12A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	NVD3055L170T4G	ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta) Surface Mount DPAK,	View
	PSMN040-100MSEX	Nexperia USA Inc., N-Channel 100V 30A (Tj) 91W (Tc) Surface Mount LFPAK33,	View
	SQM40N10-30_GE3	Vishay Siliconix, N-Channel 100V 40A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	IRLMS1902TRPBF	Infineon Technologies, N-Channel 20V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	IXTQ450P2	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-3P, PolarP2™	View
	BSC105N10LSFGATMA1	Infineon Technologies, N-Channel 100V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IRFR120TRLPBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	AUIRF8739L2TR	Infineon Technologies, N-Channel 40V 57A (Ta), 545A (Tc) 3.8W (Ta), 340W (Tc) Surface Mount DIRECTFET L8, HEXFET®	View
	STB28N65M2	STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ M2	View

SIHB22N60ET1-GE3 - Tags

SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 PDF SIHB22N60ET1-GE3 datasheet SIHB22N60ET1-GE3 specification SIHB22N60ET1-GE3 image SIHB22N60ET1-GE3 India Renesas Electronics India SIHB22N60ET1-GE3 buy SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 price SIHB22N60ET1-GE3 distributor SIHB22N60ET1-GE3 supplier SIHB22N60ET1-GE3 wholesales