Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB33N60E-GE3

SIHB33N60E-GE3

SIHB33N60E-GE3

Part NumberSIHB33N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 33A TO-263

DatasheetSiHB33N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB33N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB33N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB33N60E-GE3.
We are offering SIHB33N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB33N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB33N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB33N60E-GE3 - Related Products

	BSC059N04LS6ATMA1	Infineon Technologies, N-Channel 40V 17A (Ta), 49A (Tc), 59A (Tc) 3W (Ta), 38W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	STD5N52U	STMicroelectronics, N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount DPAK, UltraFASTmesh™	View
	SI4114DY-T1-GE3	Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IPB320N20N3GATMA1	Infineon Technologies, N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	DMN4034SSS-13	Diodes Incorporated, N-Channel 40V 5.4A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	BSP126,115	Nexperia USA Inc., N-Channel 250V 375mA (Ta) 1.5W (Ta) Surface Mount SC-73,	View
	IRFH5406TRPBF	Infineon Technologies, N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	SIR426DP-T1-GE3	Vishay Siliconix, N-Channel 40V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IPD80R900P7ATMA1	Infineon Technologies, N-Channel 800V 6A (Tc) 45W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	SQR70090ELR_GE3	Vishay Siliconix, N-Channel 100V 86A (Tc) 136W (Tc) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, TrenchFET®	View
	IRFBE30PBF	Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	IRFZ48RPBF	Vishay Siliconix, N-Channel 60V 50A (Tc) 190W (Tc) Through Hole TO-220AB,	View

SIHB33N60E-GE3 - Tags

SIHB33N60E-GE3 SIHB33N60E-GE3 PDF SIHB33N60E-GE3 datasheet SIHB33N60E-GE3 specification SIHB33N60E-GE3 image SIHB33N60E-GE3 India Renesas Electronics India SIHB33N60E-GE3 buy SIHB33N60E-GE3 SIHB33N60E-GE3 price SIHB33N60E-GE3 distributor SIHB33N60E-GE3 supplier SIHB33N60E-GE3 wholesales