SIHG35N60E-GE3
SIHG35N60E-GE3
Part Number SIHG35N60E-GE3
Description MOSFET N-CH 600V 32A TO247AC
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-247AC
To learn about the specification of SIHG35N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG35N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG35N60E-GE3.
We are offering SIHG35N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHG35N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHG35N60E
Standard Package 500
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
SIHG35N60E-GE3 - Related ProductsMore >>
FDD8778
ON Semiconductor, N-Channel 25V 35A (Tc) 39W (Tc) Surface Mount TO-252AA, PowerTrench®
View
DMN3024LK3-13
Diodes Incorporated, N-Channel 30V 9.78A (Ta) 2.17W (Ta) Surface Mount TO-252-3,
View
FDMS7682
ON Semiconductor, N-Channel 30V 16A (Ta), 22A (Tc) 2.5W (Ta), 33W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
View
VN2210N2
Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,
View
STU5N95K3
STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Through Hole I-PAK, SuperMESH3™
View
IRL540PBF
Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,
View
STW32NM50N
STMicroelectronics, N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247, MDmesh™ II
View
NVTA7002NT1G
ON Semiconductor, N-Channel 30V 154mA (Tj) 300mW (Tj) Surface Mount SC-75,
View
ZXMN10A11GTA
Diodes Incorporated, N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223,
View
IRLR2905ZTRPBF
Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
SIHG17N80E-GE3
Vishay Siliconix, N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-247AC,
View
RF4E110BNTR
Rohm Semiconductor, N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8,
View
SIHG35N60E-GE3 - Tags