Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Part NumberSIHH26N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 25A POWERPAK8X8

DatasheetSIHH26N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH26N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60E-T1-GE3.
We are offering SIHH26N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH26N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH26N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 100V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH26N60E-T1-GE3 - Related Products

	IRFS7530TRLPBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
	R6009JNJGTL	Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS (D2PAK),	View
	RF4E110GNTR	Rohm Semiconductor, N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	VN4012L-G	Microchip Technology, N-Channel 400V 160mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	FCPF11N60	ON Semiconductor, N-Channel 600V 11A (Tc) 36W (Tc) Through Hole TO-220F, SuperFET™	View
	STB26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	BSZ340N08NS3GATMA1	Infineon Technologies, N-Channel 80V 6A (Ta), 23A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	IPW60R165CPFKSA1	Infineon Technologies, N-Channel 600V 21A (Tc) 192W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	IRF3205ZSTRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	NTTFS4985NFTAG	ON Semiconductor, N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	BSC010N04LS6ATMA1	Infineon Technologies, N-Channel 40V 40A (Ta), 100A (Tc) 3W (Ta), 150W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IRLR120TRPBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View

SIHH26N60E-T1-GE3 - Tags

SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 PDF SIHH26N60E-T1-GE3 datasheet SIHH26N60E-T1-GE3 specification SIHH26N60E-T1-GE3 image SIHH26N60E-T1-GE3 India Renesas Electronics India SIHH26N60E-T1-GE3 buy SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 price SIHH26N60E-T1-GE3 distributor SIHH26N60E-T1-GE3 supplier SIHH26N60E-T1-GE3 wholesales