Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Part NumberSIHH26N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 25A POWERPAK8X8

DatasheetSIHH26N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH26N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60E-T1-GE3.
We are offering SIHH26N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH26N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH26N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 100V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH26N60E-T1-GE3 - Related Products

	SPP17N80C3XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1, CoolMOS™	View
	IPDD60R050G7XTMA1	Infineon Technologies, N-Channel 600V 47A (Tc) 278W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	BUK6610-75C,118	Nexperia USA Inc., N-Channel 75V 78A (Tc) 158W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	DMNH6021SK3Q-13	Diodes Incorporated, N-Channel 60V 50A (Tc) 2.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	IRFP4137PBF	Infineon Technologies, N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-247AC, HEXFET®	View
	IRFP4710PBF	Infineon Technologies, N-Channel 100V 72A (Tc) 190W (Tc) Through Hole TO-247AC, HEXFET®	View
	IXFB40N110Q3	IXYS, N-Channel 1100V 40A (Tc) 1560W (Tc) Through Hole PLUS264™, HiPerFET™	View
	STW78N65M5	STMicroelectronics, N-Channel 650V 69A (Tc) 450W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ V	View
	SIR184DP-T1-RE3	Vishay Siliconix, N-Channel 60V 20.7A (Ta), 73A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	BSP125H6433XTMA1	Infineon Technologies, N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™	View
	SIHP6N40D-GE3	Vishay Siliconix, N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB,	View
	SI4442DY-T1-E3	Vishay Siliconix, N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View

SIHH26N60E-T1-GE3 - Tags

SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 PDF SIHH26N60E-T1-GE3 datasheet SIHH26N60E-T1-GE3 specification SIHH26N60E-T1-GE3 image SIHH26N60E-T1-GE3 India Renesas Electronics India SIHH26N60E-T1-GE3 buy SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 price SIHH26N60E-T1-GE3 distributor SIHH26N60E-T1-GE3 supplier SIHH26N60E-T1-GE3 wholesales