Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Part NumberSIHH26N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 25A POWERPAK8X8

DatasheetSIHH26N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH26N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60E-T1-GE3.
We are offering SIHH26N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH26N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH26N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 100V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH26N60E-T1-GE3 - Related Products

	APT31M100L	Microsemi Corporation, N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole TO-264, POWER MOS 8™	View
	STP12N60M2	STMicroelectronics, N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ M2	View
	STP17NF25	STMicroelectronics, N-Channel 250V 17A (Tc) 90W (Tc) Through Hole TO-220AB, STripFET™ II	View
	AO4492	Alpha & Omega Semiconductor Inc., N-Channel 30V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	STB40N60M2	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ II Plus	View
	FCD7N60TM	ON Semiconductor, N-Channel 600V 7A (Tc) 83W (Tc) Surface Mount D-Pak, SuperFET™	View
	BSC0904NSIATMA1	Infineon Technologies, N-Channel 30V 20A (Ta), 78A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IRFS4310ZTRLPBF	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	TSM126CX RFG	Taiwan Semiconductor Corporation, N-Channel 600V 30mA (Tc) 500mW (Ta) Surface Mount SOT-23,	View
	IRF8302MTRPBF	Infineon Technologies, N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®	View
	SI3404-TP	Micro Commercial Co, N-Channel 30V 5.8A 350mW Surface Mount SOT-23,	View
	BSZ035N03LSGATMA1	Infineon Technologies, N-Channel 30V 20A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View

SIHH26N60E-T1-GE3 - Tags

SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 PDF SIHH26N60E-T1-GE3 datasheet SIHH26N60E-T1-GE3 specification SIHH26N60E-T1-GE3 image SIHH26N60E-T1-GE3 India Renesas Electronics India SIHH26N60E-T1-GE3 buy SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 price SIHH26N60E-T1-GE3 distributor SIHH26N60E-T1-GE3 supplier SIHH26N60E-T1-GE3 wholesales